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Sheet目录3822

81页 82页 83页 84页 [85页]86页 87页 88页 89页

1996 Microchip Technology Inc.

DS30412C-page 175

PIC17C4X

Applicable Devices 42 R42 42A 43 R43 44

19.0

PIC17CR42/42A/43/R43/44 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Ambient temperature under bias..................................................................................................................-55 to +125C

Storage temperature ............................................................................................................................... -65C to +150C

Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.5V

Voltage on MCLR with respect to VSS (Note 2) ..........................................................................................-0.6V to +14V

Voltage on RA2 and RA3 with respect to VSS..............................................................................................-0.6V to +14V

Voltage on all other pins with respect to VSS ..................................................................................... -0.6V to VDD + 0.6V

Total power dissipation (Note 1).................................................................................................................................1.0W

Maximum current out of VSS pin(s) - total ..............................................................................................................250 mA

Maximum current into VDD pin(s) - total .................................................................................................................200 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

......................................................................................................................±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD)

...............................................................................................................±20 mA

Maximum output current sunk by any I/O pin (except RA2 and RA3)......................................................................35 mA

Maximum output current sunk by RA2 or RA3 pins .................................................................................................60 mA

Maximum output current sourced by any I/O pin .....................................................................................................20 mA

Maximum current sunk by PORTA and PORTB (combined) ..................................................................................150 mA

Maximum current sourced by PORTA and PORTB (combined).............................................................................100 mA

Maximum current sunk by PORTC, PORTD and PORTE (combined)...................................................................150 mA

Maximum current sourced by PORTC, PORTD and PORTE (combined)..............................................................100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)

Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100

should be used when applying a "low" level to the MCLR pin rather than

pulling this pin directly to VSS.

NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above

those indicated in the operation listings of this specication is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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